 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PRELIMINARY Am29DL800B 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS s Simultaneous Read/Write operations -- Host system can program or erase in one bank, then immediately and simultaneously read from the other bank -- Zero latency between read and write operations -- Read-while-erase -- Read-while-program s Single power supply operation -- Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications s Manufactured on 0.35 m process technology -- Compatible with 0.5 m Am29DL800 device s High performance -- Access times as fast as 70 ns s Low current consumption (typical values at 5 MHz) -- 7 mA active read current -- 21 mA active read-while-program or read-whileerase current -- 17 mA active program-while-erase-suspended current -- 200 nA in standby mode -- 200 nA in automatic sleep mode -- Standard tCE chip enable access time applies to transition from automatic sleep mode to active mode s Flexible sector architecture -- Two 16 Kword, two 8 Kword, four 4 Kword, and fourteen 32 Kword sectors in word mode -- Two 32 Kbyte, two 16 Kbyte, four 8 Kbyte, and fourteen 64 Kbyte sectors in byte mode -- Any combination of sectors can be erased -- Supports full chip erase s Unlock Bypass Program Command -- Reduces overall programming time when issuing multiple program command sequences s Sector protection -- Hardware method of locking a sector to prevent any program or erase operation within that sector -- Sectors can be locked in-system or via programming equipment -- Temporary Sector Unprotect feature allows code changes in previously locked sectors s Top or bottom boot block configurations available s Embedded Algorithms -- Embedded Erase algorithm automatically pre-programs and erases sectors or entire chip -- Embedded Program algorithm automatically programs and verifies data at specified address s Minimum 1,000,000 program/erase cycles guaranteed per sector s Package options -- 44-pin SO -- 48-pin TSOP -- 48-ball FBGA s Compatible with JEDEC standards -- Pinout and software compatible with single-power-supply flash standard -- Superior inadvertent write protection s Data# Polling and Toggle Bits -- Provides a software method of detecting program or erase cycle completion s Ready/Busy# output (RY/BY#) -- Hardware method for detecting program or erase cycle completion s Erase Suspend/Erase Resume -- Suspends or resumes erasing sectors to allow reading and programming in other sectors -- No need to suspend if sector is in the other bank s Hardware reset pin (RESET#) -- Hardware method of resetting the device to reading array data This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed product without notice. Publication# 21519 Rev: A Amendment/+3 Issue Date: April 1998 PRELIMINARY GENERAL DESCRIPTION The Am29DL800B is an 8 Mbit, 3.0 volt-only flash memory device, organized as 524,288 words or 1,048,576 bytes. The device is offered in 44-pin SO, 48-pin TSOP, and 48-ball FBGA packages. The wordwide (x16) data appears on DQ0-DQ15; the byte-wide (x8) data appears on DQ0-DQ7. This device requires only a single 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device. This device is manufactured using AMD's 0.35 m process technology, and offers all the features and benefits of the Am29DL800, which was manufactured using a 0.5 m technology. The standard device offers access times of 70, 90, and 120 ns, allowing high-speed microprocessors to operate without wait states. Standard control pins--chip enable (CE#), write enable (WE#), and output enable (OE#)--control read and write operations, and avoid bus contention issues. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. tates faster programming times by requiring only two write cycles to program data instead of four. Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm--an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device automatically returns to reading array data. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. This can be achieved in-system or via programming equipment. The Erase Suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector within that bank that is not selected for erasure. True background erase can thus be achieved. There is no need to suspend the erase operation if the read data is in the other bank. The hardware RESET# pin terminates any operation in progress and resets the internal state machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device to reading array data, enabling the system microprocessor to read the boot-up firmware from the Flash memory. The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in both these modes. AMD's Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability, and cost effectiveness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte or word at a time using hot electron injection. Simultaneous Read/Write Operations with Zero Latency The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into two banks. Bank 1 contains eight boot/parameter sectors, and Bank 2 consists of fourteen larger, code sectors of uniform size. The device can improve overall system performance by allowing a host system to program or erase in one bank, then immediately and simultaneously read from the other bank, with zero latency. This releases the system from waiting for the completion of program or erase operations. Am29DL800B Features The device offers complete compatibility with the JEDEC single-power-supply Flash command set standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm--an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode facili- 2 Am29DL800B PRELIMINARY PRODUCT SELECTOR GUIDE Family Part Number Speed Option Full Voltage Range: VCC = 2.7 - 3.6 V 70 70 70 30 Am29DL800B 90 90 90 35 120 120 120 50 Max Access Time (ns) CE# Access (ns) OE# Access (ns) Note: See "AC Characteristics" for full specifications. BLOCK DIAGRAM VCC VSS OE# BYTE# Y-Decoder A0-A18 Upper Bank Address Upper Bank Latches and Control Logic RY/BY# A0-A18 RESET# WE# CE# BYTE# DQ0-DQ15 A0-A18 STATE CONTROL & COMMAND REGISTER Status X-Decoder DQ0-DQ15 A0-A18 DQ0-DQ15 Control DQ0-DQ15 X-Decoder Lower Bank A0-A18 Lower Bank Address OE# BYTE# Latches and Control Logic Y-Decoder 21519A-1 Am29DL800B 3 PRELIMINARY CONNECTION DIAGRAMS A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE# RESET# NC NC RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 Standard TSOP A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Reverse TSOP 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE# RESET# NC NC RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 21519A-2 4 Am29DL800B PRELIMINARY CONNECTION DIAGRAMS RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE# VSS OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 SO 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 RESET# WE# A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC 21519A-3 FBGA Bump Side (Bottom) View A1 A3 A2 A7 A3 RY/BY# A4 WE# A5 A9 A6 A13 B1 A4 B2 A17 B3 NC B4 RESET# B5 A8 B6 A12 C1 A2 C2 A6 C3 A18 C4 NC C5 A10 C6 A14 D1 A1 D2 A5 D3 NC D4 NC D5 A11 D6 A15 E1 A0 E2 DQ0 E3 DQ2 E4 DQ5 E5 DQ7 E6 A16 F1 CE# F2 DQ8 F3 DQ10 F4 DQ12 F5 DQ14 F6 G1 OE# G2 DQ9 G3 DQ11 G4 VCC G5 DQ13 G6 H1 VSS H2 DQ1 H3 DQ3 H4 DQ4 H5 DQ6 H6 VSS BYTE# DQ15/A-1 Special Handling Instructions for FBGA Package Special handling is required for Flash Memory products in FBGA packages. Flash memory devices in FBGA packages may be damaged if exposed to ultrasonic cleaning methods. The package an d/or data integr ity may be compromised if the package body is exposed to temperatures above 150C for prolonged periods of time. 5 Am29DL800B PRELIMINARY PIN DESCRIPTION A0-A18 = 19 Addresses DQ0-DQ14 = 15 Data Inputs/Outputs DQ15/A-1 = DQ15 (Data Input/Output, word mode), A-1 (LSB Address Input, byte mode) CE# OE# WE# BYTE# RESET# RY/BY# VCC = Chip Enable = Output Enable = Write Enable = Selects 8-bit or 16-bit mode = Hardware Reset Pin, Active Low = Ready/Busy Output = 3.0 volt-only single power supply (see Product Selector Guide for speed options and voltage supply tolerances) = Device Ground = Pin Not Connected Internally LOGIC SYMBOL 19 A0-A18 DQ0-DQ15 (A-1) CE# OE# WE# RESET# BYTE# RY/BY# 16 or 8 VSS NC 21519A-4 6 Am29DL800B PRELIMINARY ORDERING INFORMATION Standard Products AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: Am29DL800B T 70 E C OPTIONAL PROCESSING Blank = Standard Processing B = Burn-in (Contact an AMD representative for more information) TEMPERATURE RANGE C = Commercial (0C to +70C) I = Industrial (-40C to +85C) E = Extended (-55C to +125C) PACKAGE TYPE E = 40-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 040) F = 40-Pin Thin Small Outline Package (TSOP) Reverse Pinout (TSR040) S = 44-Pin Small Outline Package (SO 044) WB = 48-Ball Fine-Pitch Ball Grid Array (FBGA) 0.80 mm pitch, 6 x 9 mm package SPEED OPTION See Product Selector Guide and Valid Combinations BOOT CODE SECTOR ARCHITECTURE T = Top Sector B = Bottom Sector DEVICE NUMBER/DESCRIPTION Am29DL800B 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS Flash Memory 3.0 Volt-only Read, Program, and Erase Valid Combinations Am29DL800BT70 Am29DL800BB70 Am29DL800BT90 Am29DL800BB90 Am29DL800BT120 Am29DL800BB120 EC, EI, FC, FI, SC, SI, WBC, WBI EC, EI, EE, FC, FI, FE, SC, SI, SE, WBC, WBI, WBE Valid Combinations Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations. Am29DL800B 7 PRELIMINARY DEVICE BUS OPERATIONS This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information needed to execute the command. The contents of Table 1. the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these operations in further detail. Am29DL800B Device Bus Operations DQ8-DQ15 Addresses (Note 1) AIN AIN X X X Sector Address, A6 = L, A1 = H, A0 = L Sector Address, A6 = H, A1 = H, A0 = L AIN DQ0- DQ7 DOUT DIN High-Z High-Z High-Z DIN BYTE# = VIH DOUT DIN High-Z High-Z High-Z X BYTE# = VIL DQ8-DQ14 = High-Z, DQ15 = A-1 High-Z High-Z High-Z X Operation Read Write Standby Output Disable Reset Sector Protect (Note 2) CE# L L VCC 0.3 V L X L OE# WE# RESET# L H X H X H H L X H X L H H VCC 0.3 V H L VID Sector Unprotect (Note 2) Temporary Sector Unprotect L X H X L X VID VID DIN DIN X DIN X High-Z Legend: L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 0.5 V, X = Don't Care, AIN = Address In, DIN = Data In, DOUT = Data Out Notes: 1. Addresses are A18:A0 in word mode (BYTE# = VIH), A18:A-1 in byte mode (BYTE# = VIL). 2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the "Sector Protection/Unprotection" section. Word/Byte Configuration The BYTE# pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE# pin is set at logic `1', the device is in word configuration, DQ0-15 are active and controlled by CE# and OE# . If the BYTE# pin is set at logic `0', the device is in byte configuration, and only data I/O pins DQ0-DQ7 are active and controlled by CE# and OE#. The data I/O pins DQ8-DQ14 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function. The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. EAch bank remains enabled for read access until the command register contents are altered. See "Reading Array Data" for more information. Refer to the AC Read-Only Operations table for timing specifications and to Figure 13 for the timing diagram. ICC1 in the DC Characteristics table represents the active current specification for reading array data. Requirements for Reading Array Data To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power control and selects the device. OE# is the output control and gates array data to the output pins. WE# should remain at VIH. The BYTE# pin determines whether the device outputs array data in words or bytes. Writing Commands/Command Sequences To write a command or command sequence (which includes programming data to the device and erasing 8 Am29DL800B PRELIMINARY sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH. For program operations, the BYTE# pin determines whether the device accepts program data in bytes or words. Refer to "Word/Byte Configuration" for more information. The device features an Unlock Bypass mode to facilitate faster programming. Once a bank enters the Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four. The "Byte/Word Program Command Sequence" section has details on programming data to the device using both standard and Unlock Bypass command sequences. An erase operation can erase one sector, multiple sectors, or the entire device. Tables 2 and 3 indicate the address space that each sector occupies. The device address space is divided into two banks: Bank 1 contains the boot/parameter sectors, and Bank 2 contains the larger, code sectors of uniform size. A "bank address" is the address bits required to uniquely select a bank. Similarly, a "sector address" is the address bits required to uniquely select a sector. If the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on DQ7-DQ0. Standard read cycle timings apply in this mode. Refer to the Autoselect Mode and Autoselect Command Sequence sections for more information. ICC2 in the DC Characteristics table represents the active current specification for the write mode. The AC Characteristics section contains timing specification tables and timing diagrams for write operations. within the same bank (except the sector being erased). Figure 19 shows how read and write cycles may be initiated for simultaneous operation with zero latency. ICC6 and ICC7 in the DC Characteristics table represent the current specifications for read-while-program and read-while-erase, respectively. Standby Mode When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VCC 0.3 V. (Note that this is a more restricted voltage range than VIH.) If CE# and RESET# are held at VIH, but not within VCC 0.3 V, the device will be in the standby mode, but the standby current will be greater. The device requires standard access time (tCE) for read access when the device is in either of these standby modes, before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. ICC3 in the DC Characteristics table represents the standby current specification. Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. ICC4 in the DC Characteristics table represents the automatic sleep mode current specification. Simultaneous Read/Write Operations with Zero Latency This device is capable of reading data from one bank of memory while programming or erasing in the other bank of memory. An erase operation may also be suspended to read from or program to another location Am29DL800B 9 PRELIMINARY RESET#: Hardware Reset Pin The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/ write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS0.3 V, the device draws CMOS standby current (ICC4). If RESET# is held at VIL but not within VSS0.3 V, the standby current will be greater. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a "0" (busy) until the internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine whether the reset operation is complete. If RESET# is asserted when a program or erase operation is not executing (RY/BY# pin is "1"), the reset operation is completed within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the RESET# pin returns to VIH. Refer to the AC Characteristics tables for RESET# parameters and to Figure 14 for the timing diagram. Output Disable Mode When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the high impedance state. 10 Am29DL800B PRELIMINARY Table 2. Am29DL800BT Top Boot Sector Architecture Sector Address Bank Address Bank Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 Bank 2 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 Bank 1 SA18 SA19 SA20 SA21 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 1 X X 16/8 0 0 0 0 0 1 0 1 X 32/16 8/4 8/4 F0000h-F1FFFh F2000h-F3FFFh F4000h-F7FFFh, F8000h-FBFFFh FC000h-FFFFFh 78000h-78FFFh 79000h-79FFFh 7A000h-7BFFFh 7C000h-7DFFFh 7E000h-7FFFFh 0 1 1 1 1 1 1 1 1 1 1 1 0 0 0 0 1 1 1 1 1 1 1 0 0 1 1 0 0 1 1 1 1 1 0 1 0 1 0 1 0 0 1 0 0 1 1 0 1 1 X 0 1 8/4 8/4 X X X X X X X 0 0 X X X X X X X 0 1 X X X X X X X X X 32/16 64/32 64/32 64/32 64/32 64/32 64/32 64/32 16/8 70000h-7FFFFh 80000h-8FFFFh 90000h-9FFFFh A0000h-AFFFFh B0000h-BFFFFh C0000h-CFFFFh D0000h-DFFFFh E0000h-E3FFFh E4000h-E7FFFh, E8000h-EBFFFh EC000h-EDFFFh EE000h-EFFFFh 38000h-3FFFFh 40000h-47FFFh 48000h-4FFFFh 50000h-57FFFh 58000h-5FFFFh 60000h-67FFFh 68000h-6FFFFh 70000h-71FFFh 72000h-73FFFh 74000h-75FFFh 76000h-76FFFh 77000h-77FFFh A18 0 0 0 0 0 0 0 A17 0 0 0 0 1 1 1 A16 0 0 1 1 0 0 1 A15 0 1 0 1 0 1 0 A14 X X X X X X X A13 X X X X X X X A12 X X X X X X X Sector Size (Kbytes/ Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 (x8) Address Range 00000h-0FFFFh 10000h-1FFFFh 20000h-2FFFFh 30000h-3FFFFh 40000h-4FFFFh 50000h-5FFFFh 60000h-6FFFFh (x16) Address Range 00000h-07FFFh 08000h-0FFFFh 10000h-17FFFh 18000h-1FFFFh 20000h-27FFFh 28000h-2FFFFh 30000h-37FFFh Note: The address range is A18:A-1 if in byte mode (BYTE# = VIL). The address range is A18:A0 if in word mode (BYTE# = VIH). Am29DL800B 11 PRELIMINARY Table 3. Am29DL800BB Bottom Boot Sector Architecture Sector Address Bank Address Bank Sector SA21 SA20 SA19 SA18 SA17 SA16 SA15 Bank 2 SA14 SA13 SA12 SA11 SA10 SA9 SA8 SA7 SA6 SA5 SA4 Bank 1 SA3 SA2 SA1 SA0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 X X 16/8 1 1 1 1 1 0 1 0 X 32/16 8/4 8/4 0E000h-0FFFFh 0C000h-0DFFFh 08000h-0BFFFh, 04000h-07FFFh 00000h-03FFFh 07000h-07FFFh 06000h-06FFFh 04000h-05FFFh, 02000h-03FFFh, 00000h-01FFFh 1 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 0 0 0 0 0 0 0 1 1 0 0 1 1 0 0 0 0 0 1 0 1 0 1 0 1 1 0 1 1 0 0 1 0 0 X 1 0 8/4 8/4 X X X X X X X 1 1 X X X X X X X 1 0 X X X X X X X X X 32/16 64/32 64/32 64/32 64/32 64/32 64/32 64/32 16/8 80000h-8FFFFh 70000h-7FFFFh 60000h-6FFFFh 50000h-5FFFFh 40000h-4FFFFh 30000h-3FFFFh 20000h-2FFFFh 1C000h-1FFFFh 18000h-1BFFFh 14000h-17FFFh 12000h-13FFFh 10000h-11FFFh 40000h-47FFFh 38000h-3FFFFh 30000h-37FFFh 28000h-2FFFFh 20000h-27FFFh 18000h-1FFFFh 10000h-17FFFh 0E000h-0FFFFh 0C000h-0DFFFh 0A000h-0BFFFh 09000h-09FFFh 08000h-08FFFh A18 1 1 1 1 1 1 1 A17 1 1 1 1 0 0 0 A16 1 1 0 0 1 1 0 A15 1 0 1 0 1 0 1 A14 X X X X X X X A13 X X X X X X X A12 X X X X X X X Sector Size (Kbytes/ Kwords) 64/32 64/32 64/32 64/32 64/32 64/32 64/32 (x8) Address Range F0000h-FFFFFh E0000h-EFFFFh D0000h-DFFFFh C0000h-CFFFFh B0000h-BFFFFh A0000h-AFFFFh 90000h-9FFFFh (x16) Address Range 78000h-7FFFFh 70000h-77FFFh 68000h-6FFFFh 60000h-67FFFh 58000h-5FFFFh 50000h-57FFFh 48000h-4FFFFh Note: The address range is A18:A-1 if in byte mode (BYTE# = VIL). The address range is A18:A0 if in word mode (BYTE# = VIH). Autoselect Mode The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on DQ7-DQ0. This mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system through the command register. When using programming equipment, the autoselect mode requires VID (11.5 V to 12.5 V) on address pin A9. Address pins A6, A1, and A0 must be as shown in Table 4. In addition, when verifying sector protection, 12 the sector address must appear on the appropriate highest order address bits (see Tables 2 and 3). Table 4 shows the remaining address bits that are don't care. When all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on DQ7-DQ0. To access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in Table 5. This method does not require VID. Refer to the Autoselect Command Sequence section for more information. Am29DL800B PRELIMINARY Table 4. Am29DL800B Autoselect Codes (High Voltage Method) A18 A11 to to A12 A10 BA BA Byte Word Byte L L L L L L H H BA H X VID X L X L H X X Sector Protection Verification L L H SA X VID X L X H L X 00h (unprotected) CBh 01h (protected) X X A8 to A7 X X A5 to A2 X X DQ8 to DQ15 X 22h VID L L H X 22h 4Ah CBh DQ7 to DQ0 01h 4Ah Description Manufacturer ID: AMD Device ID: Am29DL800B (Top Boot Block) Device ID: Am29DL800B (Bottom Boot Block) Mode CE# L OE# L L WE# H H A9 VID A6 L A1 L A0 L Word L Note: L = Logic Low = VIL, H = Logic High = VIH, BA = Bank Address, SA = Sector Address, X = Don't care. Sector Protection/Unprotection The hardware sector protection feature disables both program and erase operations in any sector. The hardware sector unprotection feature re-enables both program and erase operations in previously protected sectors. Sector protection/unprotection can be implemented via two methods. The primary method requires VID on the RESET# pin only, and can be implemented either in-system or via programming equipment. Figure 2 shows the algorithms and Figure 24 shows the timing diagram. This method uses standard microprocessor bus cycle timing. For sector unprotect, all unprotected sectors must first be protected prior to the first sector unprotect write cycle. The alternate method intended only for programming equipment requires VID on address pin A9 and OE#. This method is compatible with programmer routines written for earlier 3.0 volt-only AMD flash devices. Publication number 21467 contains further details; contact an AMD representative to request a copy. The device is shipped with all sectors unprotected. AMD offers the option of programming and protecting sectors at its factory prior to shipping the device through AMD's ExpressFlashTM Service. Contact an AMD representative for details. It is possible to determine whether a sector is protected or unprotected. See the Autoselect Mode section for details. SET# pin to VID (11.5 V - 12.5 V). During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are protected again. Figure 1 shows the algorithm, and Figure 23 shows the timing diagrams, for this feature. START RESET# = VID (Note 1) Perform Erase or Program Operations RESET# = VIH Temporary Sector Unprotect Completed (Note 2) 21519A-5 Notes: 1. All protected sectors unprotected. 2. All previously protected sectors are protected once again. Temporary Sector Unprotect This feature allows temporary unprotection of previously protected sectors to change data in-system. The Sector Unprotect mode is activated by setting the RE- Figure 1. Temporary Sector Unprotect Operation Am29DL800B 13 PRELIMINARY START PLSCNT = 1 RESET# = VID Wait 1 s Protect all sectors: The indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address START PLSCNT = 1 RESET# = VID Wait 1 s Temporary Sector Unprotect Mode No First Write Cycle = 60h? Yes Set up sector address Sector Protect: Write 60h to sector address with A6 = 0, A1 = 1, A0 = 0 Wait 150 s Verify Sector Protect: Write 40h to sector address with A6 = 0, A1 = 1, A0 = 0 Read from sector address with A6 = 0, A1 = 1, A0 = 0 No No First Write Cycle = 60h? Yes All sectors protected? Yes Set up first sector address Sector Unprotect: Write 60h to sector address with A6 = 1, A1 = 1, A0 = 0 Temporary Sector Unprotect Mode Increment PLSCNT Reset PLSCNT = 1 Wait 15 ms Verify Sector Unprotect: Write 40h to sector address with A6 = 1, A1 = 1, A0 = 0 No No PLSCNT = 25? Yes Data = 01h? Increment PLSCNT Yes No Yes No Read from sector address with A6 = 1, A1 = 1, A0 = 0 Set up next sector address Device failed Protect another sector? No Remove VID from RESET# PLSCNT = 1000? Yes Data = 00h? Yes Device failed Write reset command Last sector verified? Yes No Sector Protect Algorithm Sector Protect complete Sector Unprotect Algorithm Remove VID from RESET# Write reset command Sector Unprotect complete 21519A-6 Figure 2. 14 In-System Sector Protect/Unprotect Algorithms Am29DL800B PRELIMINARY Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to Table 5 for command definitions). In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during VCC power-up and power-down transitions, or from system noise. Low VCC Write Inhibit When VCC is less than VLKO, the device does not accept any write cycles. This protects data during V CC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets to reading array data. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO. Write Pulse "Glitch" Protection Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle. Logical Inhibit Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a logical one. Power-Up Write Inhibit If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to reading array data on power-up. COMMAND DEFINITIONS Writing specific address and data commands or sequences into the command register initiates device operations. Table 5 defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data. All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on the rising edge of WE# or CE#, whichever happens first. Refer to the appropriate timing diagrams in the AC Characteristics section. The Read-Only Operations table provides the read parameters, and Figure 13 shows the timing diagram. Reset Command Writing the reset command resets the banks to the read or erase-suspend-read mode. Address bits are don't cares for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the bank to which the system was writing to reading array data. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the bank to which the system was writing to the reading array data. If the program command sequence is written to a bank that is in the Erase Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode. Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to reading array data. If a bank entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode. If DQ5 goes high during a program or erase operation, writing the reset command returns the banks to reading array data (or erase-suspend-read mode if that bank was in Erase Suspend). Reading Array Data The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. Each bank is ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the corresponding bank enters the erase-suspendread mode, after which the system can read data from any non-erase-suspended sector within the same bank. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See the Erase Suspend/Erase Resume Commands section for more information. The system must issue the reset command to return a bank to the read (or erase-suspend-read) mode if DQ5 goes high during an active program or erase operation, or if the bank is in the autoselect mode. See the next section, Reset Command, for more information. See also Requirements for Reading Array Data in the Device Bus Operations section for more information. Am29DL800B 15 PRELIMINARY Autoselect Command Sequence The autoselect command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not a sector is protected. Table 5 shows the address and data requirements. This method is an alternative to that shown in Table 4, which is intended for PROM programmers and requires VID on address pin A9. The autoselect command sequence may be written to an address within a bank that is either in the read or erase-suspend-read mode. The autoselect command may not be written while the device is actively programming or erasing in the other bank. The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle that contains the bank address and the autoselect command. The addressed bank then enters the autoselect mode. The system may read at any address within the same bank any number of times without initiating another autoselect command sequence: s A read cycle at address (BA)XX00h (where BA is the bank address) returns the manufacturer code. s A read cycle at address (BA)XX01h in word mode (or (BA)XX02h in byte mode) returns the device code. s A read cycle to an address containing a sector address (SA) within the same bank, and the address 02h on A7-A0 in word mode (or the address 04h on A6-A-1 in byte mode) returns 01h if the sector is protected, or 00h if it is unprotected. Refer to Tables 2 and 3 for valid sector addresses. The system may continue to read array data from the other bank while a bank is in the autoselect mode. To exit the autoselect mode, the system must write the reset command to return both banks to reading array data. If a bank enters the autoselect mode while erase suspended, a reset command returns that bank to the erase-suspend-read mode. A subsequent Erase Resume command returns the bank to the erase operation. 5 shows the address and data requirements for the byte program command sequence. When the Embedded Program algorithm is complete, that bank then returns to reading array data and addresses are no longer latched. The system can determine the status of the program operation by using DQ7, DQ6, or RY/BY#. Note that while the Embedded Program operation is in progress, the system can read data from the non-programming bank. Refer to the Write Operation Status section for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the program operation. The program command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from "0" back to a "1." Attempting to do so may cause that bank to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate the operation was successful. However, a succeeding read will show that the data is still "0." Only erase operations can convert a "0" to a "1." Unlock Bypass Command Sequence The unlock bypass feature allows the system to program bytes or words to a bank faster than using the standard program command sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. That bank then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the program address and data. Additional data is programmed in the same manner. This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total programming time. Table 5 shows the requirements for the command sequence. During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the bank address and the data 90h. The second cycle need only contain the data 00h. The bank then returns to reading array data. Byte/Word Program Command Sequence The system may program the device by word or byte, depending on the state of the BYTE# pin. Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically generates the program pulses and verifies the programmed cell margin. Table 16 Am29DL800B PRELIMINARY Figure 3 illustrates the algorithm for the program operation. Refer to the Erase and Program Operations table in the AC Characteristics section for parameters, and Figure 17 for timing diagrams. tus of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. Refer to the Write Operation Status section for information on these status bits. Any commands written during the chip erase operation are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Figure 4 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters, and Figure 18 section for timing diagrams. START Write Program Command Sequence Embedded Program algorithm in progress Data Poll from System Sector Erase Command Sequence Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and the sector erase command. Table 5 shows the address and data requirements for the sector erase command sequence. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. After the command sequence is written, a sector erase time-out of 50 s occurs. During the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 50 s, otherwise the last address and command may not be accepted, and erasure may begin. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. Any command other than Sector Erase or Erase Suspend during the time-out period resets that bank to reading array data. The system must rewrite the command sequence and any additional addresses and commands. The system can monitor DQ3 (in the erasing bank) to determine if the sector erase timer has timed out (See the section on DQ3: Sector Erase Timer.). The time-out begins from the rising edge of the final WE# pulse in the command sequence. When the Embedded Erase algorithm is complete, the bank returns to reading array data and addresses are no longer latched. Note that while the Embedded Erase operation is in progress, the system can read data from 17 Verify Data? No Yes No Increment Address Last Address? Yes Programming Completed 21519A-7 Note: See Table 5 for program command sequence. Figure 3. Program Operation Chip Erase Command Sequence Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. Table 5 shows the address and data requirements for the chip erase command sequence. When the Embedded Erase algorithm is complete, that bank returns to reading array data and addresses are no longer latched. The system can determine the sta- Am29DL800B PRELIMINARY the non-erasing bank. The system can determine the status of the erase operation by reading DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer to the Write Operation Status section for information on these status bits. Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the sector erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Figure 4 illustrates the algorithm for the erase operation. Refer to the Erase and Program Operations tables in the AC Characteristics section for parameters, and Figure 18 section for timing diagrams. gram operation using the DQ7 or DQ6 status bits, just as in the standard Byte Program operation. Refer to the Write Operation Status section for more information. In the erase-suspend-read mode, the system can also issue the autoselect command sequence. Refer to the Autoselect Mode and Autoselect Command Sequence sections for details. To resume the sector erase operation, the system must write the Erase Resume command. The bank address of the erase-suspended bank is required when writing this command. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the chip has resumed erasing. Erase Suspend/Erase Resume Commands The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. The bank address is required when writing this command. This command is valid only during the sector erase operation, including the 50 s time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. When the Erase Suspend command is written during the sector erase operation, the device requires a maximum of 20 s to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. After the erase operation has been suspended, the bank enters the erase-suspend-read mode. The system can read data from or program data to any sector not selected for erasure. (The device "erase suspends" all sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status information on DQ7-DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to the Write Operation Status section for information on these status bits. After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read mode. The system can determine the status of the pro- START Write Erase Command Sequence (Notes 1, 2) Data Poll to Erasing Bank from System Embedded Erase algorithm in progress No Data = FFh? Yes Erasure Completed 21519A-8 Notes: 1. See Table 5 for erase command sequence. 2. See the section on DQ3 for information on the sector erase timer. Figure 4. Erase Operation 18 Am29DL800B PRELIMINARY Table 5. Command Sequence (Note 1) Read (Note 6) Reset (Note 7) Manufacturer ID Word Byte Word Byte Word Byte Word Sector Protect Verify (Note 9) Byte Program Unlock Bypass Word Byte Word Byte 4 3 4 AAA 555 AAA 555 AAA XXX BA 555 AAA 555 AAA BA BA AA AA A0 90 AA AA B0 30 Am29DL800B Command Definitions Bus Cycles (Notes 2-5) Second Third Addr Data Fourth Addr Data Fifth Addr Data Sixth Addr Data Cycles 1 1 4 4 4 First RA XXX 555 AAA 555 AAA 555 AAA 555 AA RD F0 AA AA AA Addr Data Addr Data 2AA 555 2AA 555 2AA 555 2AA 55 55 55 (BA)555 (BA)AAA (BA)555 (BA)AAA (BA)555 (BA)AAA (BA)555 90 90 90 (BA)X00 (BA)X01 (BA)X02 (BA)X01 (BA)X02 (SA) X02 01 224A 4A 22CB CB XX00 XX01 00 01 PD Autoselect (Note 8) Device ID, Top Boot Block Device ID, Bottom Boot Block 55 555 2AA 555 2AA 555 PA XXX 2AA 555 2AA 555 55 55 PD 00 55 55 555 AAA 555 AAA (BA)AAA 555 AAA 555 AAA 90 (SA) X04 A0 20 PA Unlock Bypass Program (Note 10) 2 Unlock Bypass Reset (Note 11) Chip Erase Sector Erase Erase Suspend (Note 12) Erase Resume (Note 13) Word Byte Word Byte 2 6 6 1 1 80 80 555 AAA 555 AAA AA AA 2AA 555 2AA 555 55 55 555 AAA SA 10 30 Legend: X = Don't care RA = Address of the memory location to be read. RD = Data read from location RA during read operation. PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later. PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first. SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A18-A12 uniquely select any sector. BA = Address of the bank that is being switched to autoselect mode, is in bypass mode, or is being erased. Address bits A18- A16 select a bank. Notes: 1. See Table 1 for description of bus operations. 2. All values are in hexadecimal. 3. Except when reading array or autoselect data, all bus cycles are write operations. 4. Data bits DQ15-DQ8 are don't cares for unlock and command cycles. 5. Address bits A18-A11 are don't cares for unlock and command cycles, unless bank address (BA) is required. 6. No unlock or command cycles required when bank is in read mode. 7. The Reset command is required to return to reading array data (or to the erase-suspend-read mode if previously in Erase Suspend) when a bank is in the autoselect mode, or if DQ5 is goes high (while the bank is providing status information). 8. The fourth cycle of the autoselect command sequence is a read cycle. The system must provide the bank address to obtain the manufacturer or device ID information. 9. The data is 00h for an unprotected sector and 01h for a protected sector. See the Autoselect Command Sequence section for more information. 10. The Unlock Bypass command is required prior to the Unlock Bypass Program command. 11. The Unlock Bypass Reset command is required to return to reading array data when the bank is in the unlock bypass mode. 12. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation, and requires the bank address. 13. The Erase Resume command is valid only during the Erase Suspend mode, and requires the bank address. Am29DL800B 19 PRELIMINARY WRITE OPERATION STATUS The device provides several bits to determine the status of a write operation in the bank where a program or erase operation is in progress: DQ2, DQ3, DQ5, DQ6, DQ7, and RY/BY#. Table 6 and the following subsections describe the function of these bits. DQ7, RY/BY#, and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. These three bits are discussed first. invalid. Valid data on DQ0-DQ7 will appear on successive read cycles. Table 6 shows the outputs for Data# Polling on DQ7. Figure 5 shows the Data# Polling algorithm. Figure 20 in the AC Characteristics section shows the Data# Polling timing diagram. DQ7: Data# Polling The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm is in progress or completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command sequence. During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 s, then that bank returns to reading array data. During the Embedded Erase algorithm, Data# Polling produces a "0" on DQ7. When the Embedded Erase algorithm is complete, or if the bank enters the Erase Suspend mode, Data# Polling produces a "1" on DQ7. The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 s, then the bank returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected sector, the status may not be valid. Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with DQ0-DQ6 while Output Enable (OE#) is asserted low. That is, the device may change from providing status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the program or erase operation and DQ7 has valid data, the data outputs on DQ0-DQ6 may be still START Read DQ7-DQ0 Addr = VA DQ7 = Data? Yes No No DQ5 = 1? Yes Read DQ7-DQ0 Addr = VA DQ7 = Data? Yes No FAIL PASS 21519A-9 Notes: 1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = "1" because DQ7 may change simultaneously with DQ5. Figure 5. Data# Polling Algorithm 20 Am29DL800B PRELIMINARY RY/BY#: Ready/Busy# The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC. If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is ready to read array data, is in the standby mode, or one of the banks is in the erase-suspend-read mode. Table 6 shows the outputs for RY/BY#. DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. Table 6 shows the outputs for Toggle Bit I on DQ6. Figure 6 shows the toggle bit algorithm. Figure 21 in the "AC Characteristics" section shows the toggle bit timing diagrams. Figure 22 shows the differences between DQ2 and DQ6 in graphical form. See also the subsection on DQ2: Toggle Bit II. DQ2: Toggle Bit II The "Toggle Bit II" on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 6 to compare outputs for DQ2 and DQ6. Figure 6 shows the toggle bit algorithm in flowchart form, and the section "DQ2: Toggle Bit II" explains the algorithm. See also the DQ6: Toggle Bit I subsection. Figure 21 shows the toggle bit timing diagram. Figure 22 shows the differences between DQ2 and DQ6 in graphical form. DQ6: Toggle Bit I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address within the programming or erasing bank, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. During an Embedded Program or Erase algorithm operation, successive read cycles to any address within the programming or erasing bank cause DQ6 to toggle. The system may use either OE# or CE# to control the read cycles. When the operation is complete, DQ6 stops toggling. After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 100 s, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erasesuspended. When a bank is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When that bank enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see the subsection on DQ7: Data# Polling). If a program address falls within a protected sector, DQ6 toggles for approximately 1 s after the program command sequence is written, then returns to reading array data. Reading Toggle Bits DQ6/DQ2 Refer to Figure 6 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7-DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on DQ7-DQ0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not Am29DL800B 21 PRELIMINARY completed the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 6). DQ5: Exceeded Timing Limits DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a "1," indicating that the program or erase cycle was not successfully completed. The device may output a "1" on DQ5 if the system tries to program a "1" to a location that was previously programmed to "0." Only an erase operation can change a "0" back to a "1." Under this condition, the device halts the operation, and when the timing limit has been exceeded, DQ5 produces a "1". Under both these conditions, the system must write the reset command to return to reading array data (or to the erase-suspend-read mode if a bank was previously in the erase-suspend-program mode). START Read DQ7-DQ0 DQ3: Sector Erase Timer After writing a sector erase command sequence, the system may read DQ3 to determine whether or not erasure has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. When the time-out period is complete, DQ3 switches from a "0" to a "1". If the system can guarantee the time between additional sector erase commands to be less than 50 s, it need not monitor DQ3. See also the Sector Erase Command Sequence section. After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure that the device has accepted the command sequence, and then read DQ3. If DQ3 is "1", the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is "0", the device will accept additional sector erase commands. To ensure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command might not have been accepted. Table 6 shows the status of DQ3 relative to the other status bits. Read DQ7-DQ0 Toggle Bit = Toggle? Yes No No DQ5 = 1? Yes Read DQ7-DQ0 Twice Toggle Bit = Toggle? No Yes Program/Erase Operation Not Complete, Write Reset Command Program/Erase Operation Complete Note: The system should recheck the toggle bit even if DQ5 = "1" because the toggle bit may stop toggling as DQ5 changes to "1." See the subsections on DQ6 and DQ2 for more information. Figure 6. 22 Toggle Bit Algorithm Am29DL800B PRELIMINARY Table 6. Status Standard Mode Erase Suspend Mode Embedded Program Algorithm Embedded Erase Algorithm Erase-SuspendRead Erase Suspended Sector Non-Erase Suspended Sector Write Operation Status DQ7 (Note 2) DQ7# 0 1 Data DQ7# DQ6 Toggle Toggle No toggle Data Toggle DQ5 (Note 1) 0 0 0 Data 0 DQ3 N/A 1 N/A Data N/A DQ2 (Note 2) No toggle Toggle Toggle Data N/A RY/BY# 0 0 1 1 0 Erase-Suspend-Program Notes: 1. DQ5 switches to `1' when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to the section on DQ5 for more information. 2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 3. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm is in progress. The device outputs array data if the system addresses a non-busy bank. Am29DL800B 23 PRELIMINARY ABSOLUTE MAXIMUM RATINGS Storage Temperature Plastic Packages . . . . . . . . . . . . . . . -65C to +150C Ambient Temperature with Power Applied. . . . . . . . . . . . . . -65C to +125C Voltage with Respect to Ground VCC (Note 1) . . . . . . . . . . . . . . . . .-0.5 V to +4.0 V A9, OE#, and RESET# (Note 2) . . . . . . . . .-0.5 V to +12.5 V All other pins (Note 1) . . . . . . . . . . . . . . . . . -0.5 V to VCC+0.5 V Output Short Circuit Current (Note 3) . . . . . . 200 mA Notes: 1. Minimum DC voltage on input or I/O pins is -0.5 V. During voltage transitions, input or I/O pins may undershoot VSS to -2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC +0.5 V. See Figure 7. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 8. 2. Minimum DC input voltage on pins A9, OE#, and RESET# is -0.5 V. During voltage transitions, A9, OE#, and RESET# may undershoot VSS to -2.0 V for periods of up to 20 ns. See Figure 7. Maximum DC input voltage on pin A9 is +12.5 V which may overshoot to 14.0 V for periods up to 20 ns. 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. VCC +2.0 V VCC +0.5 V 2.0 V 20 ns 20 ns +0.8 V -0.5 V -2.0 V 20 ns 21519A-11 20 ns 20 ns Figure 7. Maximum Negative Overshoot Waveform 20 ns 21519A-12 Figure 8. Maximum Positive Overshoot Waveform OPERATING RANGES Commercial (C) Devices Ambient Temperature (TA) . . . . . . . . . . . 0C to +70C Industrial (I) Devices Ambient Temperature (TA) . . . . . . . . . -40C to +85C Extended (E) Devices Ambient Temperature (TA) . . . . . . . . -55C to +125C VCC Supply Voltages VCC for full voltage range . . . . . . . . . . . . 2.7 V to 3.6 V Operating ranges define those limits between which the functionality of the device is guaranteed. 24 Am29DL800B PRELIMINARY DC CHARACTERISTICS CMOS Compatible Parameter Symbol ILI ILIT ILO Parameter Description Input Load Current A9 Input Load Current Output Leakage Current Test Conditions VIN = VSS to VCC, VCC = VCC max VCC = VCC max; A9 = 12.5 V VOUT = VSS to VCC, VCC = VCC max CE# = VIL, OE# = VIH, Byte Mode CE# = VIL, OE# = VIH, Word Mode 5 MHz 1 MHz 5 MHz 1 MHz 7 2 7 2 15 0.2 0.2 0.2 Byte Word Byte Word 21 21 21 21 17 -0.5 0.7 x VCC VCC = 3.0 V 10% IOL = 4.0 mA, VCC = VCC min IOH = -2.0 mA, VCC = VCC min IOH = -100 A, VCC = VCC min Low VCC Lock-Out Voltage (Note 4) 0.85 VCC VCC-0.4 2.3 2.5 11.5 Min Typ Max 1.0 35 1.0 12 4 mA 12 4 30 5 5 5 45 mA 45 45 mA 45 35 0.8 VCC + 0.3 12.5 0.45 mA V V V V V V V mA A A A Unit A A A ICC1 VCC Active Read Current (Note 1) ICC2 ICC3 ICC4 ICC5 VCC Active Write Current (Note 2) VCC Standby Current (CE# Controlled) VCC Reset Current (RESET# Controlled) Automatic Sleep Mode (Note 3) VCC Active Read-WhileProgram Current (Notes 1, 4) VCC Active Read-While-Erase Current (Notes 1, 4) VCC Active Program-WhileErase-Suspended Current (Note 4) Input Low Voltage Input High Voltage Voltage for Autoselect and Temporary Sector Unprotect Output Low Voltage Output High Voltage CE# = VIL, OE# = VIH, WE# = VIL VCC = VCC max; OE# = VIL; CE#, RESET# = VCC 0.3 V VCC = VCC max; RESET# = VSS 0.3 V VIH = VCC 0.3 V; VIL = VSS 0.3 V CE# = VIL, OE# = VIH CE# = VIL, OE# = VIH CE# = VIL, OE# = VIH ICC6 ICC7 ICC8 VIL VIH VID VOL VOH1 VOH2 VLKO Notes: 1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. 2. ICC active while Embedded Erase or Embedded Program is in progress. 3. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is 200 nA. 4. Not 100% tested. Am29DL800B 25 PRELIMINARY DC CHARACTERISTICS Zero-Power Flash 20 Supply Current in mA 15 10 5 0 0 500 1000 1500 2000 Time in ns Note: Addresses are switching at 1 MHz 21519A-13 2500 3000 3500 4000 Figure 9. 10 ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents) 8 Supply Current in mA 3.6 V 6 2.7 V 4 2 0 1 2 3 Frequency in MHz Note: T = 25 C 21519A-14 4 5 Figure 10. Typical ICC1 vs. Frequency 26 Am29DL800B PRELIMINARY TEST CONDITIONS Table 7. 3.3 V Test Condition Device Under Test CL 6.2 k 2.7 k Output Load Output Load Capacitance, CL (including jig capacitance) Input Rise and Fall Times Input Pulse Levels Input timing measurement reference levels All Unit 1 TTL gate 100 5 0.0-3.0 1.5 1.5 pF ns V V V Test Specifications Note: Diodes are IN3064 or equivalent 21519A-15 Output timing measurement reference levels Figure 11. Test Setup KEY TO SWITCHING WAVEFORMS WAVEFORM INPUTS Steady Changing from H to L Changing from L to H Don't Care, Any Change Permitted Does Not Apply Changing, State Unknown Center Line is High Impedance State (High Z) OUTPUTS KS000010-PAL 3.0 V 0.0 V Input 1.5 V Measurement Level 1.5 V Output 21519A-16 Figure 12. Input Waveforms and Measurement Levels Am29DL800B 27 PRELIMINARY AC CHARACTERISTICS Read-Only Operations Parameter JEDEC tAVAV tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX Std. tRC tACC tCE tOE tDF tDF tOH Description Read Cycle Time (Note 1) Address to Output Delay Chip Enable to Output Delay Output Enable to Output Delay Chip Enable to Output High Z (Note 1) Output Enable to Output High Z (Note 1) Output Hold Time From Addresses, CE# or OE#, Whichever Occurs First Read tOEH Output Enable Hold Time (Note 1) Toggle and Data# Polling CE#, OE# = VIL OE# = VIL Test Setup Min Max Max Max Max Max Min Min Min 70 70 70 70 30 25 25 Speed Options 90 80 80 80 35 30 30 0 0 10 120 120 120 120 50 30 30 Unit ns ns ns ns ns ns ns ns ns Notes: 1. Not 100% tested. 2. See Figure 11 and Table 7 for test specifications. tRC Addresses CE# tRH tRH OE# tOEH WE# HIGH Z Outputs RESET# RY/BY# Output Valid tCE tOH HIGH Z tOE tDF Addresses Stable tACC 0V 21519A-17 Figure 13. Read Operation Timings 28 Am29DL800B PRELIMINARY AC CHARACTERISTICS Hardware Reset (RESET#) Parameter JEDEC Std tReady tReady tRP tRH tRPD tRB Description RESET# Pin Low (During Embedded Algorithms) to Read Mode (See Note) RESET# Pin Low (NOT During Embedded Algorithms) to Read Mode (See Note) RESET# Pulse Width Reset High Time Before Read (See Note) RESET# Low to Standby Mode RY/BY# Recovery Time Max Max Min Min Min Min All Speed Options 20 500 500 50 20 0 Unit s ns ns ns s ns Note: Not 100% tested. RY/BY# CE#, OE# tRH RESET# tRP tReady Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms tReady RY/BY# tRB CE#, OE# RESET# tRP 21519A-18 Figure 14. Reset Timings Am29DL800B 29 PRELIMINARY AC CHARACTERISTICS Word/Byte Configuration (BYTE#) Parameter JEDEC Std. tELFL/tELFH tFLQZ tFHQV Description CE# to BYTE# Switching Low or High BYTE# Switching Low to Output HIGH Z BYTE# Switching High to Output Active Max Max Min 25 70 70 90 5 30 90 30 120 120 Unit ns ns ns CE# OE# BYTE# tELFL DQ0-DQ14 BYTE# Switching from word to byte mode Data Output (DQ0-DQ14) Data Output (DQ0-DQ7) Address Input DQ15/A-1 DQ15 Output tFLQZ tELFH BYTE# BYTE# Switching from byte to word mode DQ0-DQ14 Data Output (DQ0-DQ7) Address Input tFHQV Data Output (DQ0-DQ14) DQ15 Output DQ15/A-1 21519A-19 Figure 15. CE# BYTE# Timings for Read Operations The falling edge of the last WE# signal WE# BYTE# tSET (tAS) tHOLD (tAH) Note: Refer to the Erase/Program Operations table for tAS and tAH specifications. 21519A-20 Figure 16. 30 BYTE# Timings for Write Operations Am29DL800B PRELIMINARY AC CHARACTERISTICS Erase and Program Operations Parameter JEDEC tAVAV tAVWL Std. tWC tAS tASO tWLAX tAH tAHT tDVWH tWHDX tDS tDH tOEPH tGHWL tELWL tWHEH tWLWH tWHDL tGHWL tCS tCH tWP tWPH tSR/W tWHWH1 tWHWH2 tWHWH1 tWHWH2 tVCS tRB tBUSY Description Write Cycle Time (Note 1) Address Setup Time Address Setup Time to OE# low during toggle bit polling Address Hold Time Address Hold Time From CE# or OE# high during toggle bit polling Data Setup Time Data Hold Time Output Enable High during toggle bit polling Read Recovery Time Before Write (OE# High to WE# Low) CE# Setup Time CE# Hold Time Write Pulse Width Write Pulse Width High Zero Latency Between Read and Write Operations Byte Programming Operation (Note 2) Word Sector Erase Operation (Note 2) VCC Setup Time (Note 1) Write Recovery Time from RY/BY# Program/Erase Valid to RY/BY# Delay Typ Typ Min Min Min 11 0.7 50 0 90 sec s ns ns Min Min Min Min Min Min Min Min Min Min Min Min Min Min Typ 35 20 35 45 45 70 70 90 90 0 45 45 0 45 0 20 0 0 0 35 30 0 9 s 50 25 50 50 50 120 120 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns Notes: 1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more information. Am29DL800B 31 PRELIMINARY AC CHARACTERISTICS Program Command Sequence (last two cycles) tWC Addresses 555h tAS PA tAH CE# tGHWL OE# tWP WE# tCS tDS Data tDH PD tBUSY RY/BY# Status DOUT tRB tWPH tWHWH1 PA PA Read Status Data (last two cycles) tCH A0h VCC tVCS Notes: 1. PA = program address, PD = program data, DOUT is the true data at the program address. 2. Illustration shows device in word mode 21519A-21 Figure 17. tWC Addresses 2AAh Program Operation Timings tAS SA VA tAH VA 555h for chip erase CE# tGHWL OE# tWP WE# tCS tDS tDH Data 55h 30h 10 for Chip Erase In Progress Complete tCH tWPH tWHWH2 tBUSY RY/BY# tVCS VCC tRB Notes: 1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see "Write Operation Status"). 2. Illustration shows device in word mode. 21519A-22 Figure 18. 32 Chip/Sector Erase Operation Timings Am29DL800B PRELIMINARY AC CHARACTERISTICS tWC Addresses Valid PA tRC Valid RA tWC Valid PA tWC Valid PA tAH tACC CE# tCE tOE OE# tOEH tWP WE# tWPH tDS tDH Data Valid In tCPH tCP tGHWL tDF tOH Valid Out Valid In Valid In tSR/W WE# Controlled Write Cycle Read Cycle CE# Controlled Write Cycles 21519A-23 Figure 19. Back-to-Back Read/Write Cycle Timings tRC Addresses VA tACC tCE CE# tCH OE# tOEH WE# tOH DQ7 High Z VA VA tOE tDF Complement Complement True Valid Data High Z DQ0-DQ6 tBUSY RY/BY# Status Data Status Data True Valid Data Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle. 21519A-24 Figure 20. Data# Polling Timings (During Embedded Algorithms) Am29DL800B 33 PRELIMINARY AC CHARACTERISTICS tAHT Addresses tAHT tASO CE# tOEH WE# tOEPH OE# tDH DQ6/DQ2 Valid Data Valid Status tAS tCEPH tOE Valid Status Valid Status Valid Data (first read) RY/BY# (second read) (stops toggling) Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle 21519A-25 Figure 21. Toggle Bit Timings (During Embedded Algorithms) Enter Embedded Erasing WE# Erase Suspend Erase Enter Erase Suspend Program Erase Suspend Program Erase Resume Erase Suspend Read Erase Erase Complete Erase Suspend Read DQ6 DQ2 Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle DQ2 and DQ6. 21519A-26 Figure 22. DQ2 vs. DQ6 34 Am29DL800B PRELIMINARY AC CHARACTERISTICS Temporary Sector Unprotect Parameter JEDEC Std. tVIDR tRSP tRRB Description VID Rise and Fall Time (See Note) RESET# Setup Time for Temporary Sector Unprotect RESET# Hold Time from RY/BY# High for Temporary Sector Unprotect Min Min Min All Speed Options 500 4 4 Unit ns s s Note: Not 100% tested. 12 V RESET# 0 V or 3 V tVIDR Program or Erase Command Sequence CE# tVIDR 0 V or 3 V WE# tRSP RY/BY# 21519A-27 tRRB Figure 23. Temporary Sector Unprotect Timing Diagram Am29DL800B 35 PRELIMINARY VID VIH RESET# SA, A6, A1, A0 Valid* Sector Protect/Unprotect Valid* Verify 40h Sector Protect: 100 s Sector Unprotect: 10 ms Valid* Data 1 s CE# 60h 60h Status WE# OE# * For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0. 21519A-28 Figure 24. Sector Protect/Unprotect Timing Diagram 36 Am29DL800B PRELIMINARY AC CHARACTERISTICS Alternate CE# Controlled Erase/Program Operations Parameter JEDEC tAVAV tAVWL tELAX tDVEH tEHDX tGHEL tWLEL tEHWH tELEH tEHEL tWHWH1 tWHWH2 Std. tWC tAS tAH tDS tDH tGHEL tWS tWH tCP tCPH tWHWH1 tWHWH2 Description Write Cycle Time (Note 1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Read Recovery Time Before Write (OE# High to WE# Low) WE# Setup Time WE# Hold Time CE# Pulse Width CE# Pulse Width High Programming Operation (Note 2) Sector Erase Operation (Note 2) Byte Word Min Min Min Min Min Min Min Min Min Min Typ Typ Typ 35 45 35 70 70 90 90 0 45 45 0 0 0 0 35 30 9 s 11 0.7 sec 50 50 50 120 120 Unit ns ns ns ns ns ns ns ns ns ns Notes: 1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more information. Am29DL800B 37 PRELIMINARY AC CHARACTERISTICS 555 for program 2AA for erase PA for program SA for sector erase 555 for chip erase Data# Polling PA Addresses tWC tWH WE# tGHEL OE# tCP CE# tWS tCPH tDS tDH Data tRH A0 for program 55 for erase PD for program 30 for sector erase 10 for chip erase tAS tAH tWHWH1 or 2 tBUSY DQ7# DOUT RESET# RY/BY# Notes: 1. Figure indicates last two bus cycles of a program or erase operation. 2. PA = program address, SA = sector address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data written to the device. 3. Waveforms are for the word mode. 21519A-29 Figure 25. Alternate CE# Controlled Erase/Program Operation Timings 38 Am29DL800B PRELIMINARY ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Chip Erase Time Byte Program Time Word Program Time Chip Program Time (Note 3) Byte Mode Word Mode Typ (Note 1) 0.7 14 9 11 9 5.8 300 360 27 sec 17 Max (Note 2) 15 Unit sec sec s s Excludes system level overhead (Note 5) Comments Excludes 00h programming prior to erasure (Note 4) Notes: 1. Typical program and erase times assume the following conditions: 25C, 3.0 V VCC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90C, VCC = 2.7 V, 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 5 for further information on command definitions. 6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles. LATCHUP CHARACTERISTICS Min Input voltage with respect to VSS on all pins except I/O pins (including A9, OE#, and RESET#) Input voltage with respect to VSS on all I/O pins VCC Current -1.0 V -1.0 V -100 mA Max 12.5 V VCC + 1.0 V +100 mA Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time. TSOP AND SO PIN CAPACITANCE Parameter Symbol CIN COUT CIN2 Parameter Description Input Capacitance Output Capacitance Control Pin Capacitance Test Setup VIN = 0 VOUT = 0 VIN = 0 Typ 6 8.5 7.5 Max 7.5 12 9 Unit pF pF pF Notes: 1. Sampled, not 100% tested. 2. Test conditions TA = 25C, f = 1.0 MHz. DATA RETENTION Parameter Description Minimum Pattern Data Retention Time 125C 20 Years Test Conditions 150C Min 10 Unit Years Am29DL800B 39 PRELIMINARY PHYSICAL DIMENSIONS* TS 048--48-Pin Standard TSOP (measured in millimeters) 0.95 1.05 Pin 1 I.D. 1 48 11.90 12.10 0.50 BSC 24 25 18.30 18.50 19.80 20.20 0.08 0.20 0.10 0.21 0.05 0.15 1.20 MAX 0.25MM (0.0098") BSC 0 5 0.50 0.70 16-038-TS48-2 TS 048 DT95 8-8-96 lv * For reference only. BSC is an ANSI standard for Basic Space Centering TSR048--48-Pin Reverse TSOP (measured in millimeters) 0.95 1.05 Pin 1 I.D. 1 48 11.90 12.10 0.50 BSC 24 25 18.30 18.50 19.80 20.20 SEATING PLANE 0.05 0.15 1.20 MAX 0.25MM (0.0098") BSC 0 5 0.50 0.70 0.08 0.20 0.10 0.21 16-038-TS48 TSR048 DT95 8-8-96 lv * For reference only. BSC is an ANSI standard for Basic Space Centering. 40 Am29DL800B PRELIMINARY PHYSICAL DIMENSIONS (continued) FGB048 --48-ball Fine-Pitch Ball Grid Array (FBGA), 6 x 9 mm (measured in mm) 0.15 M Z B M 8.80 9.20 DATUM B 5.80 6.20 0.15 M Z B M 0.025 CHAMFER INDEX DATUM A 5.60 BSC 0.40 4.00 BSC 0.80 0.40 0.08 (48x) 0.08 M Z A B 0.40 0.10 Z 0.25 0.45 DETAIL A 0.20 Z 1.20 MAX DETAIL A 16-038-FGB-2 EG137 12-2-97 lv Am29DL800B 41 PRELIMINARY PHYSICAL DIMENSIONS (continued) SO 044--44-Pin Small Outline (measured in millimeters) 44 23 13.10 13.50 15.70 16.30 1 1.27 NOM. TOP VIEW 22 28.00 28.40 0.10 0.21 SEATING PLANE 0 8 END VIEW 16-038-SO44-2 SO 044 DF83 8-8-96 lv 2.17 2.45 0.35 0.50 SIDE VIEW 0.10 0.35 2.80 MAX. 0.60 1.00 42 Am29DL800B PRELIMINARY REVISION SUMMARY FOR AM29DL800B Revision A+1 Reset Command Deleted last paragraph in section, which applied to RESET#, not the reset command. gramming or erasing bank," not "at any address." In the fourth paragraph, clarified "device" to "bank." DC Characteristics Added reference to Note 4 on ICC6 and ICC7 specifications. AC Characteristics Revision A+2 Hardware Reset (RESET#) Added note to table, fixed references to note. Revision A+3 Global Removed references to the 80 ns speed option. Changed the 70R ns (VCC 5%) speed option to the 70 ns (VCC 10%) speed option. Figure 2, In-System Sector Protect/Unprotect Algorithms In the sector protect algorithm, added a "Reset PLSCNT=1" box in the path from "Protect another sector?" back to setting up the next sector address. DQ6: Toggle Bit I In the first and second paragraphs, clarified that the toggle bit may be read "at any address within the pro- Erase/Program Operations; Alternate CE# Controlled Erase/Program Operations: Corrected the notes reference for tWHWH1 and tWHWH2. These parameters are 100% tested. Corrected the note reference for tVCS. This parameter is not 100% tested. Temporary Sector Unprotect Table Added note reference for tVIDR. This parameter is not 100% tested. Figure 24, Sector Protect/Unprotect Timing Diagram A valid address is not required for the first write cycle; only the data 60h. Erase and Programming Performance In Note 2, the worst case endurance is now 1 million cycles. Trademarks Copyright (c) 1998 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. Am29DL800B 43 |
Price & Availability of AM29DL800BB120FI
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |